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FDAF75N28 Datasheet

  • FDAF75N28

  • 280V N-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FDAF75N28 280V N-Channel MOSFET
October 2006
FDAF75N28
280V N-Channel MOSFET
Features
鈥?46A, 280V, R
DS(on)
= 0.041鈩?@V
GS
= 10 V
鈥?Low gate charge ( typical 111 nC)
鈥?Low C
rss
( typical 90 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G D S
TO-3PF
FDAF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FDAF75N28
280
46
28
184
鹵
30
3080
46
21.5
4.5
215
1.72
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
--
--
Max.
0.58
40
Unit
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDAF75N28 Rev. A

FDAF75N28 產(chǎn)品屬性

  • 360

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UniFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 280V

  • 46A

  • 41 毫歐 @ 23A，10V

  • 5V @ 250µA

  • 144nC @ 10V

  • 6700pF @ 25V

  • 215W

  • 通孔

  • SC-94

  • TO-3PF

  • 管件

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