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FDAF69N25 250V N-Channel MOSFET

September 2005

UniFET

FDAF69N25

250V N-Channel MOSFET

Features

鈥?34A, 250V, R

DS(on)

= 0.041鈩?@V

GS

= 10 V

鈥?Low gate charge ( typical 77 nC)

鈥?Low Crss ( typical 84 pF)

鈥?Fast switching

鈥?Improved dv/dt capability

TM

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild鈥檚 proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

ciency switching DC/DC converters and switched mode power

supplies.

D

G

G D S

TO-3PF

FQAF Series

S

Absolute Maximum Ratings

Symbol

V

DSS

V

DS(Avalanche)

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt

P

D

T

J,

T

STG

T

L

Drain-Source Voltage

Repetitive Avalanche Voltage

Drain Current

Drain Current

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(T

C

= 25擄C)

- Derate above 25擄C

(Note 2)

(Note 1)

(Note 1)

(Note 3)

(Note 1)

(Note 2)

Parameter

FDAF69N25

250

300

34

21.5

(Note 1)

Unit

V

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/擄C

擄C

擄C

- Continuous (T

C

= 25擄C)

- Continuous (T

C

= 100擄C)

- Pulsed

136

鹵30

1894

34

11.5

4.5

115

0.93

-55 to +150

300

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8鈥?from Case for 5 Seconds

Thermal Characteristics

Symbol

R

胃JC

R

胃CS

R

胃JA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Min.

--

0.24

--

Max.

1.08

--

40

Unit

擄C/W

擄C/W

擄C/W

漏2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDAF69N25 Rev. A

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