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FDAF62N28 Datasheet

  • FDAF62N28

  • 280V N-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FDAF62N28 280V N-Channel MOSFET
October 2006
FDAF62N28
280V N-Channel MOSFET
Features
鈥?36A, 280V, R
DS(on)
= 0.051鈩?@V
GS
= 10 V
鈥?Low gate charge ( typical 77 nC)
鈥?Low C
rss
( typical 83 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
G
G D S
TO-3PF
FDAF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FDAF62N28
280
36
22
144
鹵30
1919
36
16.5
4.5
165
1.3
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
--
--
Max.
0.75
40
Unit
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDAF62N28 Rev. A

FDAF62N28 產(chǎn)品屬性

  • 360

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UniFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 280V

  • 36A

  • 51 毫歐 @ 18A，10V

  • 5V @ 250µA

  • 100nC @ 10V

  • 4630pF @ 25V

  • 165W

  • 通孔

  • SC-94

  • TO-3PF

  • 管件

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