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FDA8440 N-Channel PowerTrench

廬

MOSFET

March 2007

FDA8440

N-Channel PowerTrench

廬

MOSFET

40V, 100A, 2.1m惟

Features

鈥?R

DS(on)

= 1.46m惟

(Typ.)@

V

GS

= 10V, I

D

= 80A

鈥?Q

g(tot)

= 345nC (Typ.)@ V

GS

= 10V

鈥?Low Miller Charge

鈥?Low QRR Body Diode

鈥?UIS Capability (Single Pulse and Repetitive Pulse)

鈥?160A Guarantee for 2 sec

鈥?RoHS Compliant

tm

Application

鈥?Automotive Engine Control

鈥?Powertrain Management

鈥?Motors, Solenoids

鈥?Electronic Steering

鈥?Integrated Starter/ Alternator

鈥?Distributed Power Architectures and VRMs

鈥?Primary Switch for 12V systems

D

G

TO-3PN

G DS

S

C

MOSFET Maximum Ratings

T

Symbol

V

DSS

V

GSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

- Continuous (T

C

= 145

o

C)

= 25

o

C unless otherwise noted

Parameter

Ratings

40

鹵20

100

30

500

(Note 1)

410

250

1.67

-55 to +175

Units

V

V

A

A

A

mJ

W

mW/

o

C

o

C

I

D

- Continuous (T

A

= 25

o

C, V

GS

= 10V, R

胃JA

= 40

o

C/W )

- Pulsed

E

AS

P

D

T

J,

T

STG

Single Pulsed Avalanche Energy

Power dissipation

Derate above 25 C

Operating and Storage Temperature

o

Thermal Characteristics

R

胃JC

R

胃JA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 2)

0.6

40

o

o

C/W

C/W

漏2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDA8440 Rev. A

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  N-Channel PowerTrench㈢ MOSFET
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