鈥?/div>
R
DS(on)
= 29.2m惟 @V
GS
= 10 V, I
D
= 40A
Fast switching speed
Low gate charge
High performance trench technology for extremely low R
DS(on)
High power and current handling capability
RoHS compliant
UltraFET
tm
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor鈥檚 advanced PowerTrench process that has been especial-
ly tailored to minimize the on-state resistance and yet maintain
superior switching performance.
Applications
鈥?PDP application
D
G
G DS
TO-3PN
S
MOSFET Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
o
C
Parameter
Ratings
250
鹵30
25
o
C)
o
Units
V
V
A
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
=
- Pulsed
64
44
(Note 1)
(Note 2)
(Note 3)
240
245
4.5
357
2.85
-55 to +150
300
-Continuous (T
C
= 100 C)
- Derate above 25
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
C
C
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.35
40
Units
o
C/W
漏2007 Fairchild Semiconductor Corporation
FDA2712 Rev. A
1
www.fairchildsemi.com