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FDA24N50 N-Channel MOSFET

FDA24N50

N-Channel MOSFET

500V, 24A, 0.19惟

Features

鈥?R

DS(on)

= 0.16惟 ( Typ.)@ V

GS

= 10V, I

D

= 12A

鈥?Low gate charge ( Typ. 65nC)

鈥?Low C

rss

( Typ. 35pF)

鈥?Fast switching

鈥?100% avalanche tested

鈥?Improved dv/dt capability

鈥?RoHS compliant

UniFET

TM

August 2008

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild鈥檚 proprietary, planar stripe,

DMOS technology.

This advance technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switching mode power supplies and active power factor

correction.

D

G

G DS

TO-3PN

S

MOSFET Maximum Ratings

T

C

= 25

o

C unless otherwise noted

Symbol

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

T

J

, T

STG

T

L

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Drain Current

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(T

C

= 25 C)

o

Parameter

Ratings

500

鹵30

25

o

C)

o

Units

V

V

A

A

mJ

A

mJ

V/ns

W

W/

o

C

o

o

-Continuous (T

C

=

- Pulsed

24

14

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

96

1872

24

2.7

4.5

270

2.2

-55 to +150

300

-Continuous (T

C

= 100 C)

- Derate above 25 C

o

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8鈥?from Case for 5 Seconds

C

C

Thermal Characteristics

Symbol

R

胃JC

R

胃CS

R

胃JA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Sink Typ.

Thermal Resistance, Junction to Ambient

Ratings

0.46

0.24

40

o

Units

C/W

漏2008 Fairchild Semiconductor Corporation

FDA24N50 Rev. A

1

www.fairchildsemi.com

next

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