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FDA24N40F Datasheet

  • FDA24N40F

  • N-Channel MOSFET, FRFET 400V, 23A, 0.19ヘ

  • 8頁

  • FAIRCHILD

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FDA24N40F N-Channel MOSFET
December 2007
FDA24N40F
N-Channel MOSFET, FRFET
400V, 23A, 0.19鈩?/div>
Features
鈥?R
DS(on)
= 0.15鈩?( Typ.)@ V
GS
= 10V, I
D
= 11.5A
鈥?Low gate charge (Typ. 46nC)
鈥?Low Crss (Typ.25pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt apability
鈥?RoHS compliant
UniFET
TM
tm
Descripition
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
TO-3PN
G DS
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
Ratings
400
鹵30
25
o
C)
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
=
- Pulsed
23
13.8
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
92
1190
23
23.5
4.5
235
1.8
-55 to +150
300
-Continuous (T
C
= 100 C)
- Derate above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
C
C
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Min.
-
0.24
-
Max.
0.53
-
40
o
Units
C/W
漏2007 Fairchild Semiconductor Corporation
FDA24N40F Rev. A
1
www.fairchildsemi.com

FDA24N40F 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UniFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 400V

  • 23A

  • 190 毫歐 @ 11.5A，10V

  • 5V @ 250µA

  • 60nC @ 10V

  • 3030pF @ 25V

  • 235W

  • 通孔

  • TO-3P-3，SC-65-3

  • TO-3PN

  • 管件

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