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FD800R33KF2 Datasheet

  • FD800R33KF2

  • IGBT-Module

  • 9頁(yè)

  • ETC

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FD 800 R 33 KF2
Datenblatt
data sheet
H枚chstzul盲ssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. Current
Grenzlastintegral der Diode
I2t - value, Diode
Spitzenverlustleistung der Diode
maximum power dissipation diode
Isolations-Pr眉fspannung
insulation test voltage
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
t
P
= 1 ms
T
j
= 25擄C
T
j
= -25擄C
T
C
= 80擄C
T
C
= 25 擄C
t
P
= 1 ms, T
C
= 80擄C
V
CES
3300
3300
800
1300
1600
V
V
A
A
A
I
C,nom.
I
C
I
CRM
T
C
=25擄C, Transistor
P
tot
9,6
kW
V
GES
+/- 20V
V
I
F
800
A
I
FRM
1600
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125擄C
I
2
t
222.200
A
2
s
T
j
= 125擄C
P
RQM
800
kW
RMS, f = 50 Hz, t = 1 min.
V
ISOL
6.000
V
RMS, f = 50 Hz, Q
PD
鈮?/div>
10 pC (acc. to IEC 1287)
V
ISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter S盲ttigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazit盲t
input capacitance
R眉ckwirkungskapazit盲t
reverse transfer capacitance
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 800 A, V
GE
= 15V, Tvj = 25擄C
I
C
= 800 A, V
GE
= 15V, T
vj
= 125擄C
I
C
= 80 mA, V
CE
= V
GE
, T
vj
= 25擄C
V
GE(th)
V
CE sat
min.
-
-
4,2
typ.
3,40
4,30
5,1
max.
4,25
5,00
6,0
V
V
V
f = 1MHz,T
vj
= 25擄C,V
CE
= 25V, V
GE
= 0V
C
ies
-
100
-
nF
f = 1MHz,T
vj
= 25擄C,V
CE
= 25V, V
GE
= 0V
C
res
-
5,4
-
nF
V
GE
= -15V ... + 15V, V
CE
= 1800V
V
CE
= 3300V, V
GE
= 0V, T
vj
= 25擄C
V
CE
= 3300V, V
GE
= 0V, T
vj
= 125擄C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25擄C
Q
G
I
CES
-
-
-
15
0,1
40
-
-
8
100
400
碌C
mA
mA
nA
I
GES
-
prepared by: J眉rgen G枚ttert
approved by: Chr. L眉bke; 20.07.99
date of publication : 08.06.99
revision: 2
1 (9)
Datenblatt FD 800 R 33 KF21
20.07.99

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