Technische Information / technical information
IGBT-Module
IGBT-Modules
FD300R12KE3
H枚chstzul盲ssige Werte / maximum rated values
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
Grenzlastintegral
I虜t value
Isolations Pr眉fspannung
insulation test voltage
t
p
= 1ms
V
R
= 0V, t
p
= 10ms, T
vj
= 125擄C
RMS, f= 50Hz, t= 1min.
T
vj
= 25擄C
T
c
= 80擄C
T
c
= 25擄C
t
p
= 1ms, T
c
= 80擄C
T
c
= 25擄C, Transistor
V
CES
I
C, nom
I
C
I
CRM
P
tot
V
GES
I
F
I
FRM
I虜t
V
ISOL
1200
300
480
600
V
A
A
A
1470
W
+/- 20
V
300
A
600
A
19
k A虜s
2,5
kV
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Kollektor Emitter S盲ttigungsspannung
collector emitter saturation voltage
Gate Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazit盲t
input capacitance
R眉ckwirkungskapazit盲t
reverse transfer capacitance
Kollektor Emitter Reststrom
collector emitter cut off current
Gate Emitter Reststrom
gate emitter leakage current
I
C
= 300A, V
GE
= 15V, T
vj
= 25擄C
I
C
= 300A, V
GE
= 15V, T
vj
= 125擄C
I
C
= 12mA, V
CE
= V
GE
, T
vj
= 25擄C
V
GE
= -15V...+15V
f= 1MHz, T
vj
= 25擄C, V
CE
= 25V, V
GE
= 0V
f= 1MHz, T
vj
= 25擄C, V
CE
= 25V, V
GE
= 0V
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25擄C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25擄C
V
CEsat
V
GE(th)
Q
G
C
ies
C
res
I
CES
I
GES
min.
-
-
5,0
typ.
1,7
2,0
5,80
max.
2,15
-
6,50
V
V
V
-
-
-
2,80
-
-
-
碌C
21
nF
0,85
nF
-
-
5
mA
-
-
400
nA
prepared by: MOD-D2; Mark M眉nzer
approved: SM TM; Wilhelm Rusche
date of publication: 2002-10-02
revision: 3.0
1 (8)
DB_FD300R12KE3_3.0
2002-10-02