SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 -NOVEMBER 1998
FEATURES
FCX789A
C
*
*
*
*
2W POWER DISSIPATION
8A Peak Pulse Current
Excellent H
FE
Characteristics up to 10 Amps
Low Saturation Voltage E.g. 10mv Typ.
FCX688B
789
Complimentary Type -
Partmarking Detail -
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-25
-25
-5
-8
-3
1 鈥?/div>
2 鈥?/div>
-55 to +150
UNIT
V
V
V
A
A
W
W
擄C
鈥?recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
鈥?Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
1
2
3
