SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 5 - SEPTEMBER 1999
FEATURES
FCX619
C
*
*
*
*
*
*
2W POWER DISSIPATION
6A PEAK PULSE CURRENT
EXCELLENT h
FE
CHARACTERISTICS UP TO 6 Amps
EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ.
EXTREMELY LOW EQUIVALENT ON-RESISTANCE;
R
CE(sat)
87m at 2.75A
E
C
B
COMPLIMENTARY TYPE -
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
鈥?/div>
鈥?/div>
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
50
50
5
6
2.75
500
1鈥?/div>
2鈥?/div>
-55 to +150
UNIT
V
V
V
A
A
mA
W
擄C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX720
619
1
2
3
