PARTMARKING DETAIL 鈥?/div>
FCX458
P58
FCX558
C
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
MIN.
-400
-400
-5
-100
-100
-0.2
-0.5
-0.9
-0.9
100
100
15
50
5
95 Typical
1600 Typical
MAX.
VALUE
-400
-400
-5
-200
-500
1
-65 to +150
UNIT
V
V
V
mA
mA
W
擄C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
Switching times
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
;I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
UNIT
V
V
V
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100碌A(chǔ)
I
C
=-10mA*
I
E
=-100碌A(chǔ)
V
CB
=-320V; V
CES
= 320V
V
EB
=-4V
I
C
=-20mA, I
B
=-2mA*
I
C
=-50mA, I
B
=-6mA*
I
C
=-50mA, I
B
=-5mA*
I
C
=-50mA, V
CE
=-10V*
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
MHz
pF
ns
ns
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
I
C
=-50mA, V
C
=-100V
I
B1
=-5mA, I
B2
=-10mA
300
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT558 datasheet.
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