SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 1 Amp continuous current
COMPLEMENTARY TYPE-
PARTMARKING DETAILS -
FCX591A
N2
FCX491A
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
TOT
T
j
:T
stg
VALUE
40
40
5
1
2
1
-65 to +150
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C ).
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off Currents
Emitter Cut-Off Current
Emitter Saturation Voltages
I
CBO,
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer
V
BE(on)
h
FE
300
300
200
35
150
10
MIN.
40
40
5
100
100
100
0.3
0.5
1.1
1.0
MAX.
UNIT CONDITIONS.
V
V
V
nA
nA
nA
V
V
V
V
I
C
=100碌A(chǔ)
I
C
=10mA*
I
E
=100碌A(chǔ)
V
CB
=30V,
V
CE
=30V
V
EB
=4V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=5V*
I
C
=1mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
MHz I
C
=50mA, V
CE
=10V
f=100MHz
pF
V
CB
=10V f=1MHz
900
Transitional Frequency
Collector-Base Breakdown
Voltage
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
鈮?%
Spice parameter data is available upon request for this device
For typical Characteristics graphs see FMMT491A datasheet
3 - 87
1
