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FCU5N60 Datasheet

  • FCU5N60

  • 600V N-Channel MOSFET

  • 9頁

  • FAIRCHILD

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FCD5N60/FCU5N60 600V N-Channel MOSFET
July 2006
SuperFET
FCD5N60 / FCU5N60
600V N-Channel MOSFET
Features
鈥?650V @T
J
= 150擄C
鈥?Typ. Rds(on)=0.81鈩?/div>
鈥?Ultra low gate charge (typ. Qg=16nC)
鈥?Low effective output capacitance (typ. Coss.eff=32pF)
鈥?100% avalanche tested
TM
Description
SuperFET
TM
is, Farichild鈥檚 proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
D
G
G
S
D-PAK
FCD Series
G D S
I-PAK
FCU Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FCD5N60 / FCU5N60
600
4.6
2.9
13.8
鹵
30
2.9
4.6
5.4
20
54
0.43
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCD5N60/FCU5N60
2.3
83
Unit
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCD5N60/FCU5N60 Rev. A0

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    600V N-Channel MOSFET
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