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FCPF11N60 Datasheet

  • FCPF11N60

  • SuperFET

  • 811.43KB

  • 10頁

  • FAIRCHILD

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FCP11N60/FCPF11N60
SuperFET
FCP11N60/FCPF11N60
General Description
SuperFET
TM
is a new generation of high voltage MOSFETs
from Fairchild with outstanding low on-resistance and low
gate charge performance, a result of proprietary technology
utilizing advanced charge balance mechanisms.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. Consequently, SuperFET is very suitable for
various AC/DC power conversion in switching mode
operation for system miniaturization and higher efficiency.
TM
Features
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650V @T
j
= 150擄C
Typ. Rds(on)=0.32鈩?/div>
Ultra low gate charge (typ. Qg=40nC)
Low effective output capacitance (typ. Coss.eff=95pF)
100% avalanche tested
D
!
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鈻?/div>
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G
!
G DS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
!
S
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Drain Current
T
C
= 25擄C unless otherwise noted
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FCP11N60
11
7
33
FCPF11N60
11*
7*
33*
鹵
30
340
11
12.5
4.5
Units
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
125
1.0
36
0.29
-55 to +150
300
* Drain current limited by maximum junction termperature
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60
1.0
0.5
62.5
FCPF11N60
3.5
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. B, March 2004

FCPF11N60 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • SuperFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 600V

  • 11A

  • 380 毫歐 @ 5.5A，10V

  • 5V @ 250µA

  • 52nC @ 10V

  • 1490pF @ 25V

  • 36W

  • 通孔

  • TO-220-3 整包

  • TO-220F

  • 管件

  • FCPF11N60_NLFCPF11N60_NL-ND

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