FCP16N60 / FCPF16N60 600V N-Channel MOSFET
FCP16N60 / FCPF16N60
600V N-Channel MOSFET
Features
鈥?650V @T
J
= 150擄C
鈥?Typ. R
ds(on)
= 0.22惟
鈥?Ultra low gate charge (typ. Qg=55nC)
鈥?Low effective output capacitance (typ. Coss.eff=110pF)
鈥?100% avalanche tested
SuperFET
Description
March 2007
TM
SuperFET
TM
is, Farichild鈥檚 proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
G DS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FCP16N60
16
10.1
48
FCPF16N60
600
16*
10.1*
48*
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
鹵
30
450
16
20.8
4.5
167
1.33
-55 to +150
300
37.9
0.3
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP16N60
0.75
62.5
FCPF16N60
3.3
62.5
Unit
擄C/W
擄C/W
漏2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCP16N60 / FCPF16N60 Rev. B