FCB20N60F 600V N-
CHANNEL FRFET
December 2006
SuperFET
FCB20N60F
600V N-
CHANNEL FRFET
Feat es
ur
鈥?650V @ T
J
= 150擄
C
鈥?Ty Rds on) 15
p.
( =0.
鈥?Fas Recov Ty (t
rr
= 160ns)
t
ery pe
鈥?Ultra low gate charge ( p.Qg=75nC)
ty
鈥?Low ef
f
ectiv output capacitance ( p.Cos . f
e
ty
sef
=165pF)
鈥?100% av
alanche tes
ted
TM
Descrpton
i i
SuperFET
TM
is Farichild鈥?proprietary new generation ofhigh
,
s
,
v
oltage MOSFET f
amily that is utiliz
ing an adv
anced charge
balance mechanis f outs
m or
tanding low on- is
res tance and
lower gate charge perf
ormance.
This adv
anced technology has been tailored to minimiz
e
conduction los ,prov s
s
ide uperior s
witching perf
ormance,and
withs
tand ex
treme dvdt rate and higher av
/
alanche energy
.
Cons
equently SuperFET is v
,
ery s
uitable f v
or arious AC/
DC
power conv ion in s
ers
witching mode operation f s s
or y tem
miniaturiz
ation and higher ef
f
iciency
.
D
D
G
G
S
S
Absol e Maxi um Ratngs
ut
m
i
Sym bol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv dt
/
P
D
T
J,
T
STG
T
L
Drain-
Source Voltage
Drain Current
Drain Current
Gate-
Source v
oltage
Single Puls Av
ed alanche Energy
Av
alanche Current
Repetitiv Av
e alanche Energy
PeakDiode Recov dvdt
ery /
Power Dis ipation
s
(
C
= 25 C)
T
-Derate abov 25 C
e
(
Note 2)
(
Note 1
)
(
Note 1
)
(
Note 3
)
Par et
am er
-Continuous(
C
= 25 C)
T
-Continuous(
C
= 100 C)
T
-Puls
ed
(
Note 1
)
FCB20N60F
600
20
12.
5
60
30
690
20
20.
8
50
208
1.
67
- to +150
55
300
Uni
t
V
A
A
A
V
mJ
A
mJ
V/
ns
W
W/C
C
C
Operating and Storage Temperature Range
Max
imum Lead Temperature f Soldering Purpos
or
e,
1/ f
8鈥?rom Cas f 5 Seconds
e or
Ther alChar erstcs
m
act i i
Sym bol
R
R
R
JC
JA
*
JA
Par et
am er
Thermal Res tance,Junction- Cas
is
to- e
Thermal Res tance,Junction- Ambient*
is
to-
Thermal Res tance,Junction- Ambient
is
to-
FCB20N60F
0.
6
40
62.
5
Uni
t
C/
W
C/
W
C/
W
* When mounted on the minimum pad s e recommended (
iz
PCB Mount)
漏2006 Fairchild Semiconductor Corporation
1
www.airchilds
f
emi.
com
FCB20N60F Rev A2
.