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FCB11N60FTM Datasheet

  • FCB11N60FTM

  • 600V N-Channel MOSFET

  • 1005.47KB

  • 8頁

  • FAIRCHILD

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FCB11N60F 600V N-Channel MOSFET
SuperFET
FCB11N60F
600V N-Channel MOSFET
Features
鈥?650V @T
J
= 150擄C
鈥?Typ. R
DS(on)
= 0.32惟
鈥?Fast Recovery Type ( t
rr
= 120ns )
鈥?Ultra low gate charge (typ. Q
g
= 40nC)
鈥?Low effective output capacitance (typ. C
oss
.eff = 95pF)
鈥?100% avalanche tested
May 2006
TM
tm
Description
SuperFET
TM
is, Farichild鈥檚 proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
D
D
G
G
S
D
2
-PAK
FCB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FCB11N60F
600
11
7
33
鹵
30
340
11
12.5
50
125
1.0
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
*
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
FCB11N60F
1.0
40
62.5
Unit
擄C/W
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCB11N60F Rev. A1

FCB11N60FTM 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • SuperFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 600V

  • 11A

  • 380 毫歐 @ 5.5A，10V

  • 5V @ 250µA

  • 52nC @ 10V

  • 1490pF @ 25V

  • 125W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 帶卷 (TR)

  • FCB11N60FTMTR

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