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FCA50CC50 Datasheet

  • FCA50CC50

  • MOSFET MODULE

  • 21頁

  • SANREX

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MOSFET MODULE
FCA50CC50
FCA50CC50
is a dual power MOSFET module designed for fast swiching applications
of high voltage and current.錛? devices are serial connected with a fast recovery diode
錛坱rr
鈮?00ns
錛塺everse
connected across each MOSFET.錛?The mounting base of the
module is electrically isolated from semiconductor elements for simple heatsink
construction.
鈼?/div>
I
D
錛?0A,
UL;E76102 M錛?/div>
錛?/div>
107.5鹵0.6
93鹵0.3
3錕?frac12;錕組5
78
V
DSS
錛?00V
鈼?/div>
Suitable for high speed switching applications.
鈼?/div>
Low ON resistance.
鈼?/div>
Wide Safe Operating Areas.
鈼?/div>
t
rr
鈮?00ns
fast recovery diode for free wheel.
錛圓pplications錛?/div>
UPS
錛圕VCF錛?/div>
Motor Control, Switching Power Supply, etc.
,
D2 S1
q
S2
w
i
G2
u
S2
4
2 蠁6.5
銉?/div>
1
2
3
56
23
23
TAB=110
錛圱0.5錛?/div>
30max
NAME PLATE
e
D1
y
S1
t
G1
Unit錛?/div>
A
鈻燤aximum
Ratings
Symbol
V
DSS
V
GSS
I
D
I
DP
-I
D
P
T
Tj
Tstg
V
ISO
Item
Drain-Source Voltage
Gate-Source Voltage
Drain
Current
Source Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Isolation Voltage錛圧.M.S.錛?/div>
Mounting
Torque
Mass
Mounting
錛圡6錛?/div>
Terminal錛圡5錛?/div>
A.C. 1minute
Recommended Value 2.5-3.9錛?5-40錛?/div>
Recommended Value 1.5-2.5錛?5-25錛?/div>
Typical Value
Tc錛?5鈩?/div>
DC
Pulse
Duty 55%
Conditions
錛圱j錛?5鈩?unless otherwise specified錛?/div>
Ratings
FCA50CC50
500
鹵20
50
100
50
330
鈭?0 to 錛?50
鈭?0 to 錛?25
2500
4.7錛?8錛?/div>
2.7錛?8錛?/div>
240
Unit
V
V
A
A
W
鈩?/div>
鈩?/div>
V
N錕?frac12;錕絤
錛坘gf錕?frac12;錕紹錛?/div>
g
鈻燛lectrical
Charactistics
Symbol
I
GSS
I
DSS
錛圔R錛?/div>
V
DSS
錛坱h錛?/div>
V
GS
錛坥n錛?/div>
R
DS
錛坥n錛?/div>
V
DS
錛圱j錛?5鈩?unless otherwise specified錛?/div>
Conditions
V
GS
錛澛?0V錛孷
DS
錛?V
V
GS
錛?V錛孷
DS
錛?00V
V
GS
錛?V錛孖
D
錛?mA
V
DS
錛漋
GS
錛孖
D
錛?0mA
I
D
錛?5A錛孷
GS
錛?5V
I
D
錛?5A錛孷
GS
錛?5V
V
DS
錛?0V錛孖
D
錛?5A
V
GS
錛?V錛孷
DS
錛?5V錛宖錛?.0MHz
V
GS
錛?V錛孷
DS
錛?5V錛宖錛?.0MHz
V
GS
錛?V錛孷
DS
錛?5V錛宖錛?.0MHz
60
V
DD
錛?00V錛孷
GS
錛?5V
I
D
錛?5A錛孯
G
錛?惟
I
S
錛?5A錛孷
GS
錛?V
I
S
錛?5A錛孷
GS
錛濃垝5V錛宒i/dt錛?00A/
渭s
MOSFET
Diode
80
100
520
140
2.0
100
0.38
1.67
V
ns
鈩?W
ns
30
10000
1900
750
500
1.0
5.0
140
3.5
Ratings
Min.
Typ.
Max.
鹵1.0
1.0
Unit
渭A
mA
V
V
m惟
V
S
pF
pF
pF
Item
Gate Leakage Current
Zero Gate Voltage Drain Current
Darin-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Switching
Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
gfs
Ciss
Coss
Crss
td on錛?/div>
錛?/div>
tr
td off錛?/div>
錛?/div>
tf
V
SDS
trr
Rth j-c錛?Thermal Resistance
錛?/div>
1
31max
4
35鹵0.6
17

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