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FCA20N60_F109 Datasheet

  • FCA20N60_F109

  • 600V N-Channel MOSFET

  • 10頁

  • FAIRCHILD

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FCH20N60 / FCA20N60 600V N-Channel MOSFET
SuperFET
FCH20N60 / FCA20N60
600V N-Channel MOSFET
Features
鈥?650V @T
J
= 150擄C
鈥?Typ. Rds(on)=0.15惟
鈥?Ultra low gate charge (typ. Qg=55nC)
鈥?Low effective output capacitance (typ. Coss.eff=110pF)
鈥?100% avalanche tested
December 2006
TM
Description
SuperFET
TM
is, Farichild鈥檚 proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
G D
S
TO-247
FCH Series
TO-3P
G DS
FCA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FCH20N60
600
FCA20N60
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
20
12.5
60
鹵
30
690
20
20.8
4.5
208
1.67
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.6
--
41.7
Unit
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A2

FCA20N60_F109 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • SuperFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 600V

  • 20A

  • 190 毫歐 @ 10A，10V

  • 5V @ 250µA

  • 98nC @ 10V

  • 3080pF @ 25V

  • 208W

  • 通孔

  • TO-3P-3，SC-65-3

  • TO-3PN

  • 管件

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