FCA20N60F 600V N-CHANNEL FRFET
FCA20N60F
600V N-CHANNEL FRFET
Features
鈥?650V @T
J
= 150擄C
鈥?Typ. Rds(on)=0.15惟
鈥?Fast Recovery Type ( t
rr
= 160ns )
鈥?Ultra low gate charge (typ. Qg=75nC)
鈥?Low effective output capacitance (typ. Coss.eff=165pF)
鈥?100% avalanche tested
SuperFET
Description
January 2007
TM
SuperFET
TM
is, Farichild鈥檚 proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
TO-3PN
G DS
FCA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FCA20N60F
600
20
12.5
60
鹵
30
690
20
20.8
50
208
1.67
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCA20N60F
0.6
40
Unit
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCA20N60F Rev. A