Ordering number :EN4516A
FC810
Silicon Barrier Diode
15V, 700mA Rectifier
Features
路 Low forward voltage (VF max=0.55V) .
路 Fast reverse recorvery time (trr max=10ns) .
路 Composite type with 2 diodes contained in the CP
package currently in use, saving the mounting space
greatly.
路 The FC810 is formed with two chips, each being
equivalent to the SB07-015C, placed in one package.
Package Dimensions
unit:mm
1236A
[FC810]
1:Cathode
2:Cathode
3:Anode
4:No Contact
5:Anode
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25藲C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
15
17
700
5
鈥?5 to +125
鈥?5 to +125
Unit
V
V
mA
A
藲C
藲C
Electrical Characteristics
at Ta = 25藲C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth (j-a)
IR=150碌A(chǔ)
IF=700mA
VR=7.5V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
560
20
10
Conditions
Ratings
min
15
0.55
20
typ
max
Unit
V
V
碌A(chǔ)
pF
ns
藲C/W
路 Marking:810
trr Test Circuit
Electrical Connection
1:Cathode
2:Cathode
3:Anode
4:No Contact
5:Anode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/90696GI (KOTO) BX-0240 No.4516-1/2
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