Ordering number :EN4338A
FC808
Silicon Epitaxial Plannar Type
High-Speed Switching Composite Diode
(Cathode Common)
Features
路 Composite type with 4 diodes contained in the CP
package currently in use, saving the mounting space
greatly.
路 Fast switching speed.
Package Dimensions
unit:mm
1250A
[FC808]
1:Anode
2:Anode
3:Anode
4:Cathode
5:Anode
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO*
IFM*
P*
Tj
Tstg
10ms*
Conditions
Ratings
SANYO:CP5
Unit
85
80
2
100
300
200
150
V
V
A
mA
mA
mW
藲C
藲C
鈥?5 to +150
Note) *:Unit rating. The total rating is 150% of the unit rating.
Electrical Characteristics
at Ta = 25藲C
Parameter
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Symbol
VF
IR
C
trr
IF=10mA
IF=100mA
VR=50V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=5
鈩?/div>
, Irr=0.1Irp
4.0
Conditions
Ratings
min
typ
0.72
0.92
max
1.0
1.2
0.1
0.5
7.0
5.0
V
V
碌A(chǔ)
碌A(chǔ)
pF
ns
Unit
Note) The specifications shown above are for each individual diode.
路 Marking:808
Reverse Recovery Time Test Circuit
Electrical Connection
1:Anode
2:Anode
3:Anode
4:Cathode
5:Anode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/O3196GI/82093YH (KOTO) X-7219 No.4338-1/2
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