Ordering number :EN3401A
FC806
Silicon Schottky Barrier Diode
50V, 100mA Rectifier
Features
路 Low forward voltage (VF max=0.55V) .
路 Fast reverse recorvery time (trr max=10ns) .
路 Composite type with 2 diodes contained in the CP
package currently in use, saving the mounting space
greatly.
路 The FC806 is formed with two chips, each being
equivalent to the SB01鈥?5CP, placed in one package.
Package Dimensions
unit:mm
1236A
[FC806]
1:Cathode
2:Cathode
3:Anode
4:No Contact
5:Anode
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50MHz sine wave, 1 cycle
Conditions
Ratings
50
55
100
2
鈥?5 to +125
鈥?5 to +125
Unit
V
V
mA
A
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth (j-a)
IR=50碌A(chǔ)
IF=100mA
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
560
4.4
10
Conditions
Ratings
min
50
0.55
15
typ
max
V
V
碌A(chǔ)
pF
ns
Unit
藲C/W
路 Marking:806
trr Test Circuit
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/O3196GI/8030MH, TA, TS No.3401-1/2
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