Ordering number :EN3400B
FC805
Silicon Schottky Barrier Diode
30V, 500mA Rectifier
Features
路 Low forward voltage (VF max=0.55V) .
路 Fast reverse recorvery time (trr max=10ns) .
路 Composite type with 2 diodes contained in the CP
package currently in use, saving the mounting space
greatly.
路 The FC805 is formed with two chips, each being
equivalent to the SB05鈥?3C, placed in one package.
Package Dimensions
unit:mm
1236A
[FC805]
1:Cathode
2:Cathode
3:Anode
4:No Contact
5:Anode
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50MHz sine wave, 1 cycle
Conditions
Ratings
30
35
500
5
鈥?5 to +125
鈥?5 to +125
Unit
V
V
mA
A
藲C
藲C
Electrical Characteristics
at Ta = 25藲C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth (j-a)
IR=150碌A(chǔ)
IF=500mA
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
560
16
10
Conditions
Ratings
min
30
0.55
30
typ
max
V
V
碌A(chǔ)
pF
ns
藲C/W
Unit
路 Marking:805
trr Test Circuit
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/O3196GI/8030MH, TA, TS No.3400-1/2
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