Ordering number :EN3194A
FC804
Silicon Schottky Barrier Diode
30V, 200mA Rectifier
Features
路 Low forward voltage (VF max=0.55V) .
路 Fast reverse recorvery time (trr max=10ns) .
路 Composite type with 2 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
路 The FC804 is formed with two chips, each being
equivalent to the SB02鈥?3C, placed in one package.
Package Dimensions
unit:mm
1236A
[FC804]
1:Cathode
2:Cathode
3:Cathode
4:No connection
5:Anode
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Repetitive Peak Reverse Voltage
2Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50MHz sine wave, 1 cycle
Conditions
Ratings
30
35
200
2
鈥?5 to +125
鈥?5 to +125
Unit
V
V
mA
A
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
Symbol
VR
VF
IR
C
trr
IR=50碌A(chǔ)
IF=200mA
VR=15V
VR=10V, f=1MHz
IF=IR= (鈥? 10mA, See specified Test Circuit
6.3
10
Conditions
Ratings
min
30
0.55
15
typ
max
Unit
V
V
碌A(chǔ)
pF
ns
Note) The specifications shown above are for each individual diode.
路 Marking:804
trr Test Circuit
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/53196GI (KOTO) /O259MO, TS No.3194-1/2
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