Ordering number :EN3193A
FC803
Silicon Schottky Barrier Diode
30V, 70mA Rectifier
Features
路 Low forward voltage (VF max=0.55V) .
路 Fast reverse recorvery time (trr max=10ns) .
路 Composite type with 4 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
路 The FC803 is formed with twi chips, each being
equivalent to the SB007W03C, placed in one
package.
Package Dimensions
unit:mm
1233A
[FC803]
1:Anode
2:Anode
3:Cathode
4:Anode
5:Anode
6:Cathode
SANYO:CP6
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50MHz sine wave, 1 cycle
Conditions
Ratings
Unit
30
35
70
2
鈥?5 to +125
鈥?5 to +125
V
V
mA
A
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
Symbol
VR
VF
IR
C
trr
IR=20碌A(chǔ)
IF=70mA
VR=15V
VR=10V, f=1MHz
IF=IR= (鈥? 10mA, See specified Test Circuit
3.0
10
Conditions
Ratings
min
30
0.55
5
Unit
max
V
V
碌A(chǔ)
pF
ns
typ
Note) The specifications shown above are for each individual diode.
路 Marking:803
trr Test Circuit
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/53196GI (KOTO) /O259MO, TS No.3193-1/2
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