Ordering number :EN3108B
FC802
Silicon Epitaxal Planar Diode
Composite Diode
for High-Speed Switching Applications
Features
路 Composite type with 4 diodes cintained in the CP
package currently in use, resulting in the greatly
improved circuit board using efficiency.
路 The FC802 is formed with two chips, each being
equivalent to the DCB015, placed in one package.
路 Fast switching speed.
Package Dimensions
unit:mm
1233A
[FC802]
1:Anode
2:Anode
3:Cathode
4:Anode
5:Anode
6:Cathode
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO
IFM
Tj
Tstg
1碌s
Conditions
Ratings
SANYO:CP6
Unit
75
50
4
100
300
150
V
V
A
mA
mA
藲C
藲C
鈥?0 to +150
Electrical Characteristics
at Ta = 25藲C
Parameter
Forward Voltage
Symbol
VF
IF=10mA
IF=50mA
IF=100mA
Reverse Current
Intertermimal Capacitance
Reverse Recovery Time
IR
C
trr
VR=50V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50
鈩?/div>
, Irr=0.1Irp
4.0
Conditions
Ratings
min
typ
0.72
0.85
0.92
max
1.0
1.0
1.2
100
7.0
5.0
Unit
V
V
V
nA
pF
ns
Note) The specifications shown above are for each individual diode.
路 Marking:802
Reverse Recovery Time Test Circuit
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/52595GI (KOTO) 169MO, TS 84995 No.3108-1/2
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