Ordering number :EN3107A
FC801
Silicon Epitaxal Planar Diode
Composite Diode
for High-Speed Switching Applications
Features
路 Composite type with 4 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
路 The FC801 is formed with two chips, each being
equivalent to the DCA015, placed in one package.
Package Dimensions
unit:mm
1232A
[FC801]
1:Cathode
2:Cathode
3:Anode
4:Cathode
5:Cathode
6:Anode
SANYO:CP6
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO
IFM
Tj
Tstg
1碌s
Conditions
Ratings
75
50
4
100
300
150
鈥?0 to +150
Unit
V
V
A
mA
mA
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Forward Voltage
Symbol
VF
IF=10mA
IF=50mA
IF=100mA
Reverse Current
Intertermimal Capacitance
Reverse Recovery Time
IR
C
trr
VR=50V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50
鈩?/div>
, Irr=0.1Irp
4.5
Conditions
Ratings
min
typ
0.72
0.82
0.88
max
1.0
1.0
1.2
100
9.0
8.0
V
V
V
nA
pF
ns
Unit
Note) The specifications shown above are for each individual diode.
路 Marking:801
Reverse Recovery Time Test Circuit
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/91694MO 8-4998/5169MO, TS No.3107-1/2
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