Ordering number:EN4658
FC601
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
路 Composed of a Shottky barrier diode and a PNP
transistor with built-in resistors, and contained in one
CP package, resulting in greatly improved circuit-
board using efficiency.
路 The FC601 is composed of an equivalent chip to the
SB007-03CP and an equivalent chip to the RA104C
(R1=10k鈩? R2=47k鈩?.
Package Dimensions
unit:mm
2105A
[FC601]
1:Collector
2:Cathode
3:Anode
4:Emitter
5:Base
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
V RSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
30
35
70
2
鈥?5 to +125
鈥?5 to +125
V
V
mA
A
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
鈥?0
鈥?0
鈥?
鈥?00
200
150
鈥?5 to +150
V
V
V
mA
mW
Symbol
Conditions
Ratings
Unit
藲C
藲C
藲C
藲C
Marking:601
Electrical Connection
Continued on next page.
1:Collector
2:Cathode
3:Anode
4:Emitter
5:Base
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH (KOTO) B8-0026 No.4658-1/4
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