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FC40SA50FK Datasheet

  • FC40SA50FK

  • HEXFET Power MOSFET

  • 123.26KB

  • 8頁(yè)

  • IRF

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I27139- 01/03
FC40SA50FK
Applications
!
Switch Mode Power Supply (SMPS)
!
Uninterruptible Power Supply
!
High Speed Power Switching
!
Hard Switched and High Frequency Circuits
Benefits
!
Low Gate Charge Qg results in Simple
Drive Requirement
!
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
!
Fully Characterized Capacitance and
Avalanche Voltage and Current
!
Low R
DS(on)
!
Fully Insulated Package
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
"
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
#
Operating Junction and
Storage Temperature Range
HEXFET
廬
Power MOSFET
V
DSS
500V
R
DS(on)
typ.
0.084
鈩?/div>
I
D
40A
SOT-227
Max.
40
26
160
430
3.45
鹵 30
9.0
-55 to + 150
Units
A
W
W/擄C
V
V/ns
擄C
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy$
Avalanche Current"
Repetitive Avalanche Energy"
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
Max.
1240
40
43
Units
mJ
A
mJ
Thermal Resistance
Symbol
R
胃JC
R
胃CS
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Typ.
鈥?/div>
0.05
Max.
0.29
鈥?/div>
Units
擄C/W
www.irf.com
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