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Ordering number:EN4983

FC18

TR:NPN Epitaxial Planar Silicon Transistor

FET:N-Channel Junction Silicon FET

High-Frequency Amp, AM Amp,

Low-Frequency Amp Applications

Features

路 Composed of 2 chips, one being equivalent to the

2SK2394 and the other the 2SC4639, in the

convertional CP package, improving the mounting

efficiency greatly.

路 Drain and emitter are shared.

Package Dimensions

unit:mm

2122

[FC18]

Electrical Connection

1:Collector

2:Gate

3:Source

4:Emitter/Drain

5:Base

SANYO:XP5

Specifications

Absolute Maximum Ratings

at Ta = 25藲C

Parameter

[FET]

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Drain Current

Allowable Power Dissipation

[TR]

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

[Common Ratings]

Total Dissipation

Junction Temperature

Storage Temperature

PT

Tj

Tstg

300

150

鈥?5 to +150

mW

藲C

藲C

Symbol

VDSX

VGDS

IG

ID

PD

VCBO

VCEO

VEBO

IC

I CP

IB

PC

Conditions

Ratings

15

鈥?5

10

50

200

55

50

6

150

300

30

200

Unit

V

V

mA

mA

mW

V

V

V

mA

mA

mA

mW

路 Marking:18

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/42695MO(KOTO) BX-1576 No.4983-1/5

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FC18相關(guān)型號(hào)PDF文件下載

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• FC18
  英文版
  High-Frequency Amp, AM Amp, Low-Frequency Amp Applications
  SANYO
  FC18
• FC18
  英文版
  High-Frequency Amp, AM Amp, Low-Frequency Amp Applications
  SANYO [San...
  FC18

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