Ordering number:EN4653
FC152
PNP Epitaxial Planar Silicon Composite Transistor
High-Frequency Amp, Differential Amp
Applications
Features
路 Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
路 The FC152 is formed with two chips, being equiva-
lent to the 2SC4270, placed in one package.
路 Excellent in thermal equilibrium, pair capability and
especially suited for differerntial amp.
Package Dimensions
unit:mm
2104A
[FC152]
1:Emitter 1
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
SANYO:CP6
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
25
15
3
50
200
300
150
鈥?5 to +150
Unit
V
V
V
mA
mW
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
B-E Voltage Difference
Gain-Bnadwidth Product
Output Capacitance
Power Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
hFE(small/
VCB=20V, IE=0
VEB=2V, IC=0
VCE=10V, IC=5mA
60
0.7
0.95
3.0
1.5
3.0
0.7
12
3.0
1.0
10
mV
GHz
pF
dB
dB
Conditons
Ratings
min
typ
max
0.1
10
200
Unit
碌A
碌A
VCE=10V, IC=5mA
large)
VBE(large- VCE=10V, IC=0
small)
fT
VCE=10V, IC=10mA
Cob
VCB=10V, f=1MHz
PG
NF
VCE=10V, IC=10mA, f=0.9GHz
VCE=10V, IC=3mA, f=0.9GHz
Note:The specifications shown above are for each individual transistor. However, the specifications of h
FE
(small/large)
and V
BE
(large-small) are for pair capability
Marking:152
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH (KOTO) X-7851 No.4653-1/4
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