Ordering number:EN4652
FC151
PNP Epitaxial Planar Silicon Composite Transistor
High-Frequency Amp, Current Mirror
Circuit Applications
Features
路 Composite type with 2 transistors contained in the CP
package currently in use, improving the mounting
efficiency greatly.
路 The FC151 is formed with two chips, being equiva-
lent to the 2SA1669, placed in one package.
路 Excellent in thermal equilibrium and pair capability.
Electrical Connection
1:Emitter 1
1:Emitter 1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
SANYO:CP6
Package Dimensions
unit:mm
2103A
[FC151]
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
鈥?0
鈥?5
鈥?
鈥?0
200
300
150
鈥?5 to +150
Unit
V
V
V
mA
mW
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
B-E Voltage Difference
Gain-Bandwidth Product
Output Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
VCB=鈥?5V, IE=0
VEB=鈥?V, IE=0
20
0.7
0.93
3.0
1.5
5
2.0
3.0
1.0
1.5
15
mV
GHz
pF
dB
dB
Conditons
Ratings
min
typ
max
鈥?.1
鈥?.1
100
Unit
碌A(chǔ)
碌A(chǔ)
hFE
VCE=鈥?0V, IC=鈥?mA
hFE(small/ VCE=鈥?0V, IC=鈥?mA
large)
VBE(large- VCE=鈥?0V, IC=鈥?mA
small)
fT
Cob
| S21e |
NF
VCE=鈥?0V, IC=鈥?mA
VCB=鈥?0V, f=1MHz
VCE=鈥?0V, IC=鈥?mA, f=0.9GHz
VCE=鈥?0V, IC=鈥?mA, f=0.9GHz
Note:The specifications shown above are for each individual transistor. However, the specifications of h
FE
(small/large)
and h
FE
(large-small) are for pair capability
Marking:151
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH(KOTO) X-7850 No.4652-1/5
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