Ordering number:EN3324
FC139
NPN Epitaxial Planar Silicon Composite Transistor
Low-Frequency General-Purpose Amp,
General Driver Applications
Features
路 Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
路 The FC139 is formed with two chips, being equiva-
lent to the 2SC3689, placed in one package.
路 Adoption of FBET process.
路 High DC current gain (h
FE
=800 to 3200).
路 High V
EBO
(V
EBO
鈮?5V)
路 Excellent in thermal equilibrium and pair capability.
Electrical Connection
Package Dimensions
unit:mm
2067
[FC139]
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
60
50
15
100
200
20
200
300
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mA
mW
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Symbol
ICBO
IEBO
hFE
hFE(small/
large)
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=40V, IE=0
VEB=10V, IC=0
VCE=5V,
VCE=5V,
IC=10mA
IC=10mA
800
0.8
1500
0.98
200
1.5
0.1
0.8
60
50
15
0.5
1.1
MHz
pF
V
V
V
V
V
Conditons
Ratings
min
typ
max
0.1
0.1
3200
Unit
碌A(chǔ)
碌A(chǔ)
VCE=10V, IC=10mA
VCB=10V, f=1MHz
IC=50mA, IB=1mA
IC=50mA, IB=1mA
IC=10碌A(chǔ), IE=0
IC=1mA, RBE=鈭?/div>
IE=10碌A(chǔ), IC=0
Note:The specifications shown above are for each individual transistor.
Marking:139
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2080MO, TS No.3324-1/3
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