Ordering number:EN3291
FC137
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
路 On-chip bias resistances (R1=4.7k鈩?).
路 Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
路 The FC137 is formed with two chips, being equiva-
lent to the 2SA1510, placed in one package.
路 Excellent in thermal equilibrium and pair capability.
Electrical Connection
C1:Collector 1
C2:Collector 2
B2:Base 2
EC:Emitter Common
B1:Base 1
SANYO:CP5
Package Dimensions
unit:mm
2066
[FC137]
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
鈥?0
鈥?0
鈥?
鈥?00
鈥?00
200
300
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Symbol
ICBO
IEBO
hFE
fT
Cob
VCB=鈥?0V, IE=0
VEB=鈥?V, IC=0
VCE=鈥?V, IC=鈥?0mA
VCE=鈥?0V, IC=鈥?mA
VCB=鈥?0V, f=1MHz
鈥?0
鈥?0
鈥?.4
鈥?.6
3.3
鈥?.55
鈥?.0
4.7
鈥?.8
鈥?.0
6.1
100
200
5.1
鈥?.1
鈥?.3
MHz
pF
V
V
V
V
V
k鈩?/div>
Conditons
Ratings
min
typ
max
鈥?.1
鈥?.1
Unit
碌A(chǔ)
碌A(chǔ)
VCE(sat) IC=鈥?0mA, IB=鈥?.5mA
V(BR)CBO IC=鈥?0碌A(chǔ), IE=0
V(BR)CEO IC=鈥?00碌A(chǔ), RBE=鈭?/div>
VI(off)
VI(on)
R1
VCE=鈥?V, IC=鈥?00碌A(chǔ)
VCE=鈥?.2V, IC=鈥?0mA
Note:The specifications shown above are for each individual transistor.
Marking:137
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2190MO, TS No.3291-1/2
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