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FC12 Datasheet

  • FC12

  • High-Frequency Amp, AM Applications, Low-Frequency Amp

  • 5頁

  • SANYO

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Ordering number:EN3482
FC12
TR:NPN Epitaxial Plannar Silicon Transistor
FET:N-Channel Junction Silicon Transistor
High-Frequency Amp, AM Applications,
Low-Frequency Amp
Features
路 Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
路 The FC12 is formed with two chips, being equivalent
to the 2SC4639, placed in one package.
路 Common drain and emitter.
Package Dimensions
unit:mm
2075
[FC12]
Electrical Connection
C:Collector
G:Gate
S:Source
E/D:Emitter/Drain
B:Base
SANYO:CP5
Switching Time Test Circuit
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
PT
Tj
Tstg
300
150
鈥?5 to +150
mW
VCBO
VCEO
VEBO
IC
ICP
IB
PC
55
50
6
150
300
30
200
V
V
V
mA
mA
mA
mW
VDSX
VGDS
IG
ID
PD
15
鈥?5
10
50
200
V
V
mA
mA
mW
Symbol
Conditions
Ratings
Unit
藲C
藲C
Marking:12
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/5132MH, HK No.3482-1/5

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