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FC11 Datasheet

  • FC11

  • Low-Frequency General-Purpose Amp, Differential Amp Applicat...

  • 94.70KB

  • 3頁

  • SANYO

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Ordering number:EN3154
FC11
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amp,
Differential Amp Applications
Features
路 Adoption of FBET process.
路 Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
路 The FC11 is formed with two chips, being equivalent
to the 2SK771, placed in one package.
路 Excellent in the thermal equilibrium and pair capa-
bility and suitable for use in differential amp.
路 Common source.
Package Dimensions
unit:mm
2070
[FC11]
Electrical Connection
G1:Gate1
G2:Gate2
D2:Drain2
SC:Source Common
D1:Drain1
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
PT
Tj
Tstg
1unit
Conditions
Ratings
40
鈥?0
10
10
200
300
150
鈥?5 to +150
Unit
V
V
mA
mA
mW
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Gate-to-Source Voltage Drop
Drain Current
Drain Current Ratio
Forward Transfer Admittance
Forward Transfer Admittance Ratio
Input Capacitacnce
Reverse Transfer Capacitance
Noise Figure
Ciss
Crss
NF
| Yfs |
Symbol
Conditions
Ratings
min
鈥?0
鈥?.0
鈥?.3
1.2*
0.9
4.5
0.9
9.0
2.1
1.5
pF
pF
dB
9.0
mS
鈥?.9
鈥?.8
30
6.0*
typ
max
Unit
V
nA
V
mV
mA
V(BR)GDS IG=10碌A(chǔ), VDS=0
IGSS
VGS=鈥?0V, VDS=0V
VGS(off)
鈭哣
GS
IDSS
VDS=10V, ID=1碌A(chǔ)
|VGS large 鈥?VGS small |, VDS=10V, ID=1mA
VDS=10V, VGS=0V
VDS=10V, IDSS small/IDSS large
VDS=10V, VGS=0V, f=1kHz
VDS=10V, |Yfs|small / |Yfs|large
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, Rg=1k
鈩?/div>
, ID=1mA, f=1kHz
Note*:The FC11 is classified by I
DSS
as follows (unit:mA)
1.2
D
3.0
2.5
E
6.0
Marking:11
I
DSS
rank:D,E
The Specifications shown above are for each individual
transistor.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/7259TA, TS No.3154-1/3

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