Ordering number:EN3061A
FC119
NPN Epitaxial Planar Silicon Transistor
High-Frequency General-Purpose Amp,
Differential Amp Applications
Features
路 Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
路 The FC119 is formed with two chips, being equiva-
lent to the 2SC2814, placed in one package.
路 Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2068
[FC119]
Electrical Connection
E1:Emitter1
E2:Emitter2
B2:Base2
C2:Collerctor2
B1:Base1
C1:Collector1
SANYO:CP6
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
30
20
5
30
200
300
150
鈥?5 to+150
Unit
V
V
V
mA
mW
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base to Emitter Voltage Drop
Gain-Bandwidth Product
Reverse Transfer Capacitance
Base to Collector Time Constant
Noise Figure
Power Gain
Symbol
ICBO
IEBO
hFE
VCB=10V, IE=0
VEB=4V, IC=0
80
0.8
0.98
1.0
200
320
0.95
3.0
25
1.2
20
15
mV
MHz
pF
ps
dB
dB
Conditions
Ratings
min
typ
max
0.1
0.1
200
Unit
碌A(chǔ)
碌A(chǔ)
VCE=6V, IC=1mA
hFE(small/- VCE=6V, IC=1mA
large)
VBE(large VCE=6V, IC=1mA
-small)
fT
Cre
rbb'cc
NF
PG
VCE=6V, IC=1mA
VCE=6V, f=1MHz
VCE=6V, IC=1mA, f=31.9MHz
VCE=6V, IC=1mA, f=100MHz
VCE=6V, IC=1mA, f=100MHz
Note: The specifications shown above are for each individual transistor.
Marking:119
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/6169MO/5129MO, TS No.3061-1/5
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