Ordering number:EN3116
FC118
NPN Epitaxial Planar Silicon Composite Transistor
Low-Frequency
General-Purpose Amp Applications
Features
路 Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
路 The FC118 is formed with two chips, being equiva-
lent to the 2SC4577, placed in one package.
路 Low collector to emitter saturation voltage.
路 Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2067
[FC118]
Electrical Connection
E1:Emitter1
B1:Base1
C2:Collerctor2
E2:Emitter2
B2:Base2
C1:Collector1
SANYO:CP6
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
I CP
IB
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
20
15
5
500
1
100
200
300
150
鈥?5 to+150
Unit
V
V
V
mA
A
mA
mW
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
hFE(small/
large)
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
VCB=15V, IE=0
VEB=4V, IC=0
VCE=2V, IC=10mA
VCE=2V, IC=400mA
VCE=2V, IC=10mA
VCE=2V, IC=50mA
VCE=10V, f=1MHz
IC=5mA. IB=0.5mA
IC=200mA. IB=10mA
IC=200mA. IB=10mA
20
15
5
160
80
0.8
0.98
300
4
15
160
0.95
30
300
1.2
MHz
pF
mV
mV
V
V
V
V
Conditions
Ratings
min
typ
max
0.1
0.1
560
Unit
碌A
碌A
V(BR)CBO IC=10碌A, IE=0
V(BR)CEO IC=1mA, RBE=鈭?/div>
V(BR)EBO
IE=10碌A, IC=0
Note: The specifications shown above are for each individual transistor.
Marking:110
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/5129MO, TS No.3116-1/3
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