Ordering number:EN3080
FC112
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
Features
路 On-chip bias resistors (R
1
=22k鈩? R
2
=22k鈩?
路 Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
路 The FC112 is formed with two chips, being equiva-
lent to the 2SC3396, placed in one package.
路 Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2066
[FC112]
Electrical Connection
C1:Collerctor1
C2:Collerctor2
B2:Base2
EC:Emitter Common
B1:Base1
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
I CP
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
50
50
10
100
200
200
300
150
鈥?5 to+150
Unit
V
V
V
mA
mA
mW
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistance Ratio
Symbol
ICBO
ICEO
IEBO
hFE
fT
Co b
VCB=40V, IE=0
VCE=40V, IB=0
VEB=5V, IC=0
VCE=5V, IC=5mA
VCE=10V, IC=5mA
VCB=10V, f=1MHz
50
50
0.8
1.0
15
0.9
1.1
1.9
22
1.0
1.5
3.0
29
1.1
70
50
250
3.3
0.1
0.3
MHz
pF
V
V
V
V
V
k鈩?/div>
113
Conditions
Ratings
min
typ
max
0.1
0.5
160
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
VCE(sat) IC=10mA. IB=0.5mA
V(BR)CBO IC=10碌A(chǔ), IE=0
V(BR)CEO IC=100碌A(chǔ), RBE=鈭?/div>
VI(off)
VI(on)
R1
R1/R2
VCE=5V, IC=100碌A(chǔ)
VCE=0.2V, IC=5mA
Note: The specifications shown above are for each individual transistor.
Marking:112
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4139MO, TS No.3080-1/2
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