Ordering number:EN3074
FC106
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
Features
路 On-chip bias resistors (R
1
=47k鈩? R
2
=47k鈩?
路 Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
路 The FC106 is formed with two chips, being equiva-
lent to the 2SC3395, placed in one package.
路 Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2067
[FC106]
Electrical Connection
E1:Emitter1
B1:Base1
C2:Collector2
E2:Emitter2
B2:Base2
C1:Collector1
SANYO:CP6
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
1unit
Conditions
Ratings
50
50
10
100
200
200
300
150
鈥?5 to+150
Unit
V
V
V
mA
mA
mW
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistance Ratio
Symbol
ICBO
ICEO
IEBO
hFE
fT
Cob
VCB=40V, IE=0
VCE=40V, IB=0
VEB=5V, IC=0
VCE=5V, IC=5mA
VCE=10V, IC=5mA
VCB=10V, f=1MHz
50
50
0.8
1.0
32
0.9
1.1
2.5
47
1.0
1.5
5.0
62
1.1
30
50
250
3.3
0.1
0.3
MHz
pF
V
V
V
V
V
k鈩?/div>
53
Conditions
Ratings
min
typ
max
0.1
0.5
80
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
VCE(sat) IC=5mA. IB=0.25mA
V(BR)CBO IC=10碌A(chǔ), IE=0
V(BR)CEO IC=100碌A(chǔ), RBE=鈭?/div>
VI(off)
VI(on)
R1
R1/R2
VCE=5V, IC=100碌A(chǔ)
VCE=0.2V, IC=5mA
Note: The specifications shown above are for each individual transistor.
Marking:106
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4139MO, TS No.3074-1/2
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