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Advanced Technical Information

Silicon Carbide

Schottky

Rectifier Bridge

in ISOPLUS i4-PAC

TM

FBS 10-06SC

V

RRM

= 600 V

I

D(AV)M

= 6.6 A

C

junction

= 9 pF

1

5

Rectifier Bridge

Symbol

V

RRM

I

FAV

I

D(AV)M

I

FSM

P

tot

T

C

= 90擄C; sine 180擄 (per diode)

T

C

= 90擄C

T

VJ

= 25擄C; t = 10 ms; sine 50 Hz

T

C

= 25擄C

(per diode)

Conditions

Maximum Ratings

600

3

6.6

12

19

V

A

A

A

W

Features

鈥?Silicon Carbide Schottky Diodes

- no reverse recovery at turn off - only

charge of junction capacity - soft turn

off waveform

- no forward recovery at turn on

- switching behaviour independent of

temperature

- low leakage current

鈥?ISOPLUS i4-PAC(TM) package

- isolated back surface

- low coupling capacity between pins

and heatsink

- enlarged creepage towards heatsink

- application friendly pinout

- high reliability

- industry standard outline

Symbol

Conditions

Characteristic Values

(T

VJ

= 25擄C, unless otherwise specified)

min.

typ. max.

T

VJ

= 25擄C

T

VJ

= 125擄C

T

VJ

= 25擄C

T

VJ

= 125擄C

T

VJ

= 125擄C

1.7

1.9

0.04

9

11.5

2.0

0.2

V

V

mA

mA

pF

8 K/W

K/W

V

F

I

R

C

J

R

thJC

R

thJS

I

F

= 4 A;

V

R

= V

RRM

;

V

R

= 400 V;

(per diode)

Applications

鈥?output rectifiers of high end switched

mode power supplies

鈥?other high frequency rectifiers

Data according to IEC 60747 and refer to a single diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions.

漏 2002 IXYS All rights reserved

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