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FBAS70TW Datasheet

  • FBAS70TW

  • SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

  • 4頁

  • JIANGSU

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
F
BAS70TW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
WBFBP-06C
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
(2脳2脳0.5)
unit: mm
1
FBAS70TW
Marking:K73
Maximum Ratings
@T
A
=25
Symbol
V
RRM
V
RWM
V
R
I
F
I
FSM
Pd
R
胃JA
T
J
T
STG
Limits
Unit
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
Forward Continuous Current
Peak forward surge current @<1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature range
70
70
100
150
625
125
-55 to +125
V
mA
mA
mW
鈩?W
鈩?/div>
鈩?/div>
Electrical Ratings @T
A
=25鈩?/div>
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse Recovery Time
Symbol
V
F1
V
F2
I
R
C
T
t
rr
Min.
Typ.
Max.
0.41
1
100
2
5
Unit
V
V
nA
pF
ns
Conditions
I
F
=1mA
I
F
=15mA
V
R
=50V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100鈩?/div>

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