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FB180SA10 Datasheet

  • FB180SA10

  • Power MOSFET

  • 138.95KB

  • 8頁

  • IRF

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PD- 91651C
FB180SA10
HEXFET
Power MOSFET
l
l
l
l
l
l
l
l
Fully Isolated Package
Easy to Use and Parallel
Very Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Drain to Case Capacitance
Low Internal Inductance
D
V
DSS
= 100V
R
DS(on)
= 0.0065W
G
I
D
= 180A
S
Description
Fifth Generation, high current density HEXFETS are
paralled into a compact, high power module providing
the best combination of switching, ruggedized design,
very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial - industrial applications at power
dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT-
227 package contribute to its universal acceptance
throughout the industry.
S O T -22 7
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
V
ISO
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Max.
180
120
720
480
2.7
鹵 20
700
180
48
5.7
-55 to + 150
2.5
1.3
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
kV
N鈥
Thermal Resistance
Parameter
R
qJC
R
qCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Typ.
鈥撯€撯€?/div>
0.05
Max.
0.26
鈥撯€撯€?/div>
Units
擄C/W
1
www.irf.com
2/1/99

FB180SA10 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • FET

  • HEXFET®

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 180A

  • 6.5 毫歐 @ 108A,10V

  • 4V @ 250µA

  • 380nC @ 10V

  • 10700pF @ 25V

  • 480W

  • 底座安裝

  • SOT-227-4,miniBLOC

  • SOT-227B

  • 管件

  • *FB180SA10VS-FB180SA10VS-FB180SA10-NDVSFB180SA10VSFB180SA10-ND

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