PD- 91651C
FB180SA10
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
l
l
Fully Isolated Package
Easy to Use and Parallel
Very Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Drain to Case Capacitance
Low Internal Inductance
D
V
DSS
= 100V
R
DS(on)
= 0.0065W
G
I
D
= 180A
S
Description
Fifth Generation, high current density HEXFETS are
paralled into a compact, high power module providing
the best combination of switching, ruggedized design,
very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial - industrial applications at power
dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT-
227 package contribute to its universal acceptance
throughout the industry.
S O T -22 7
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
V
ISO
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Max.
180
120
720
480
2.7
鹵 20
700
180
48
5.7
-55 to + 150
2.5
1.3
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
kV
N鈥
Thermal Resistance
Parameter
R
qJC
R
qCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Typ.
鈥撯€撯€?/div>
0.05
Max.
0.26
鈥撯€撯€?/div>
Units
擄C/W
1
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