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FAP-450 Datasheet

  • FAP-450

  • N-channel MOS-FET(500V, 0,38ヘ, 14A, 190W)

  • 224.83KB

  • 3頁

  • FUJI

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FAP-450
FAP-IIS Series
> Features
-
-
-
-
-
-
-
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
V
GS
= 鹵 30V Guarantee
Repetitive Avalanche Rated
N-channel MOS-FET
500V
0,38鈩?/div>
14A
190W
> Outline Drawing
> Applications
-
-
-
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25擄C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Avalanche Current
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
Rating
Unit
V
DS
500
V
I
D
14
A
I
D(puls)
56
A
V
GS
鹵30
V
*2
I
AR
A
14
*1
E
AS
mJ
760
P
D
190
W
T
ch
150
擄C
T
stg
-55 ~ +150
擄C
*1) V
CC
= 50V; L = 7mH; I
AS
= 14A; R
G
= 50
鈩?
Starting T
ch
= 25擄C (See Fig. 1 & 2)
*2) Repetitive Rating : Pulse Width limited by max. Channel Temperature
Symbol
BV
DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
C
C
C
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
iss
oss
rss
SD
rr
rr
> Equivalent Circuit
- Electrical Characteristics (T
C
=25擄C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=250碌A
V
DS=
V
GS
V
DS
=500V
T
ch
=25擄C
T
ch
=125擄C
V
GS
=0V
V
GS
=鹵30V
V
DS
=0V
I
D
=8A
V
GS
=10V
I
D
=8A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=250V
V
GS
=10V
R
G
= 6,1W
R
D
= 20鈩?/div>
T
ch
=25擄C
L = 100碌H
V
CC
=400V
V
GS
=10V
I
D
= 14A
I
F
=2xI
DR
V
GS
=0V T
ch
=25擄C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/碌s T
ch
=25擄C
Min.
500
3,0
Typ.
3,0
Max.
4,0
25
1,0
100
0,38
Unit
V
V
碌A
mA
nA
鈩?/div>
S
pF
pF
pF
ns
ns
ns
ns
A
nC
nC
nC
V
ns
碌C
7
10
0,32
14
2200
330
140
18
70
130
70
4
170
20
90
1,5
1,0
700
9,0
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to ambient
channel to case
Min.
Typ.
Max.
35
0,65
Unit
擄C/W
擄C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

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  • 英文版
    N-channel MOS-FET(500V, 0,38ヘ, 14A, 190W)
    FUJI
  • 英文版
    N-channel MOS-FET(500V, 0,38ヘ, 14A, 190W)
    FUJI [Fuji...

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