= 0.13鈩?/div>
G
I
D
= 38A
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 watts. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
S O T -2 2 7
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
V
ISO
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Max.
38
24
150
500
4.0
鹵 20
580
38
50
16
-55 to + 150
2.5
(1.3N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
kV
Thermal Resistance
Parameter
R
胃JC
R
胃CS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Typ.
鈥撯€撯€?/div>
0.05
Max.
0.25
鈥撯€撯€?/div>
Units
擄C/W
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