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FA1A4M Datasheet

  • FA1A4M

  • MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR...

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  • NEC   NEC

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DATA SHEET
SILICON TRANSISTOR
FA1A4M
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
MINI MOLD
FEATURES
鈥?Resistors Built-in TYPE
C
B
R
1
E
2.9鹵0.2
PACKAGE DIMENSIONS
in millimeters
2.8鹵0.2
0.4
+0.1
鈥?.05
1.5
0.65
+0.1
鈥?.15
R
2
0.95 0.95
2
3
鈥?Complementary to FN1A4M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
(T
A
= 25 藲C)
Junction temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
J
T
stg
60
50
10
100
200
200
150
鈥?5 to +150
V
V
V
mA
mA
mW
藲
C
藲
C
Marking : L33
Marking
0.3
1.1 to 1.4
0.16
+0.1
鈥?.06
0 to 0.1
Electrode Connection
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25 藲C)
CHARACTERISTIC
Collector Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Low-Level Input Voltage
High-Level Input Voltage
Input Resistor
Resistor Ratio
Turn-on Time
Storage Time
Turn-off Time
SYMBOL
I
CBO
h
FE1
*
h
FE2
*
V
CE(sat)
*
V
IL
*
V
IH
*
R
1
R
1
/R
2
t
on
t
stg
t
off
3.0
7.0
0.9
35
80
62
230
0.05
1.08
1.4
10
1.0
0.06
2.0
2.15
13
1.1
0.2
5.0
6.0
0.2
0.8
V
V
V
k鈩?/div>
MIN.
TYP.
MAX.
100
100
UNIT
nA
TEST CONDITIONS
V
CB
= 50 V, I
E
= 0
V
CE
= 5.0 V, I
C
= 5.0 mA
V
CE
= 5.0 V, I
C
= 50 mA
I
C
= 5.0 mA, I
B
= 0.25 mA
V
CE
= 5.0, I
C
= 100
碌
A
V
CE
= 0.2 V, I
C
= 5.0 mA
碌
s
碌
s
碌
s
V
CC
= 5 V, V
in
= 5 V
R
L
= 1 k鈩?/div>
PW = 2
碌
s, Duty Cycle
鈮?/div>
2 %
* Pulsed: PW = 350
碌
s, Duty Cycle = 2 %
Document No. D10215EJ3V0DS00 (3rd edition)
(Previous No. TC-1654)
Date Published October 1995 P
Printed in Japan
0.4
+0.1
鈥?.05
1
漏
1985

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