MITSUBISHI SEMICONDUCTOR GaAs FET
FA01220A
GaAs FET HYBRID IC
DESCRIPTION
FA01220A is RF Hybrid IC designed for 1.5GHz band
small size handheld radio.
1
GND
8
7
6
Unit:mm
FEATURES
鈥?Low voltage
鈥?High gain
鈥?High efficiency
鈥?High power
3.5V
20.5B
50%
30.5dBm
2
3
4
5
GND
10.0
APPLICATION
PDC1.5GHz
0.8
2.0
6.0
1
RF INPUT
2
V
D1
3
GND
4
V
D2
5
RF OUTPUT
6
GND
7
GND
8
V
G1,2
tolerance:鹵0.2
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D
P
in
T
C
(op)
T
stg
Parameter
Drain voltage
Input power
Operating case temp
Storage temp
Condition
Tc=25藲C, Po鈮?0.5dBm
Tc=25藲C, Z
G
=Z
L
=50鈩?/div>
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
藲C
藲C
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS
(T
a
=25藲C)
Symbol
f
P
in
I
Dt
蟻in
ACP50
ACP100
2fo
3fo
Parameter
Frequency
Input power
Total drain current
Return loss
鹵50kHz adjacent channel power
鹵100kHz adjacent channel power
2nd harmonics
3rd harmonics
Test conditions
Min
1429
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Limits
Typ
鈥?/div>
(7)
640
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
1453
10
720
-6
-47
-62
-30
-30
Unit
MHz
dBm
mA
dB
dBc
dBc
dBc
dBc
P
O
=30.5dBm
V
D1
=V
D2
=3.5V
V
G1,2
=-2.5V
Z
G
=Z
L
=50鈩?/div>
(蟺/4DQPSK)
Ditto
(CW)
Nov. 麓97
FA01220A相關型號PDF文件下載
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廠商
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